80% Tungsten Sputtering Targets
Target shape: plate, disc, rectangle, square, ring, round rod, stepped disc, stepped rectangle, triangle, tubular target, nested target, etc. or customized according to customer requirements, and can be processed according to the drawings provided by the customer. We can also provide customers with binding services for some target materials.
Reference size: diameter ≦355.6mm (14 inches), length ≦1000mm, width ≦200mm, thickness ≦20mm
80% W Sputtering Targets
What are the processes for sputtering targets?
The sputtering target process is mainly used in two aspects: sputtering etching and thin film deposition.
When depositing thin films, the sputtering source is placed on the target and is bombarded by argon ions to produce sputtering. If the target material is a single substance, a thin film of the target material is formed on the substrate; if the reactive gas is intentionally introduced into the sputtering chamber, it chemically reacts with the sputtered target atoms and is deposited on the substrate. A compound film of the target material can be formed. Generally, compound or alloy films are produced by direct sputtering with a compound or alloy target.
80% Tungsten Titanium Sputtering Target
During sputter etching, the material to be etched is placed at the target position and is bombarded by argon ions for etching. The etching rate is related to factors such as the sputtering yield of the target material, the ion current density, and the vacuum degree of the sputtering chamber. During sputter etching, sputtered target atoms should be removed from the sputtering chamber as much as possible. A common method is to introduce a reactive gas, react with the sputtered target atoms to generate volatile gas, and then discharge it from the sputtering chamber through a vacuum system.
