Tungsten Sputtering Target factpry
Magnetron sputtering principle:
An orthogonal magnetic field and electric field are added between the sputtered target (cathode) and anode, and the required inert gas (usually Ar gas) is filled in the high vacuum chamber. The permanent magnet forms a 250 to 350°C angle on the surface of the target material. The Gaussian magnetic field and the high-voltage electric field form an orthogonal electromagnetic field. Under the effect of the electric field, Ar gas is ionized into positive ions and electrons. A certain negative high voltage is applied to the target. The electrons emitted from the target are affected by the magnetic field and the ionization probability of the working gas increases, forming a high-density plasma near the cathode. Ar ions accelerate towards the target surface under the action of the Lorentz force and bombard the target surface at a very high speed, causing the sputtered atoms on the target to follow the momentum conversion principle and fly away from the target surface with high kinetic energy. The film is deposited on the substrate.
80% Tungsten Sputtering Targets
Magnetron sputtering is generally divided into two types: DC sputtering and radio frequency sputtering. The principle of DC sputtering equipment is simple, and its speed is also fast when sputtering metal. Radio frequency sputtering has a wider range of applications. In addition to sputtering conductive materials, it can also sputter non-conductive materials. It can also perform reactive sputtering to prepare compound materials such as oxides, nitrides and carbides. If the frequency of radio frequency is increased, it becomes microwave plasma sputtering. Currently, electron cyclotron resonance (ECR) type microwave plasma sputtering is commonly used.
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